| 摘要 |
PURPOSE:To realize a high-efficiency, instant evaluation of compound semi conductors by a method wherein evaluation of crystallinity is accomplished by using the photoluminescence measurement technique to eliminate the need for cap seal after electrode formation. CONSTITUTION:On a substrate 30, a first compound semiconductor layer 31 of the P or N type is epitaxially grown, whereon a second and third compound semiconductor layers 32, 33 of the same conductivity type are epitaxially grown, for the production of a specimen 34. Exciting light 47 out of a light source 41 is thrown upon the specimen 34, and the resultant photoluminescence 48 is measured. The exciting light 47 thrown upon the specimen 34 is larger than the third semiconductor layer 32 in terms of energy gap, and smaller than the first semiconductor layer 31. The photoluminescence 48 induced by the light 47 therefore is scarcely absorbed by the third semiconductor layer 33 but is absorbed by the second semiconductor layer 32. |
