SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To constitute a three dimensional bipolar MOSIC by a method wherein a MOSFET composed of a bipolar type transistor as the first step semiconductor element and a channel made of amorphous silicon step semiconductor element respectively formed through the intermediary of an insulating film is formed on the surface of a semiconductor substrate. CONSTITUTION:An n<+> type buried layer 2 is buried in a part of p<-> type Si substrate 1 to grow an n<-> type Si layer 3 epitaxially as well as to form isolated p type layer 4 by means of implanting B ion. Firstly impurity is diffused to form a p type base 5, an n type emitter 6 and an n<+> type collector 7 as well as to provide an excellent electrode 8. Secondly an SiO2 film 9 is formed and etched to make recessions 11. Thirdly a-Si12 buried in the recessions 11 and doped with impurity is made into source . drain with low resistance n<+> type conductivity. Fourthly another a-Si13 entirely doped with impurity is thinly formed. Fifthly p<+> type impurity is diffused in the upper thin a a-Si film 13 to form an n<+> or p<+> type layer. Finally a thick CVD.SiO2 film 14 is formed to form another thin SiO2 film 15 as a gate further forming an electrode 16.