发明名称 HEAT TREATMENT DEVICE FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To enable to perform the necessary radiation heating between the back end of the preceding shutter and the front end of the following shutter by a method wherein the first and the second shutters are provided between a semiconductor wafer and a heater with which the wafer is radiation-heated, and a screening shutter is retarded by a fixed time when compared with a releasing shutter. CONSTITUTION:The second shutter 5b is operated immediately after the operation of the first shutter 5a, a slit 10 is formed in such a manner that the radiant heat of a heater 2 is concentrated on the surface of a semiconductor wafer 6 by the first shutter 5a and the second shutter 5b. Said slit 10 is travelled using shutter travelling mechanisms 4a and 4b, and a heating process is conducted while the slit 10 is being scanned on the whole surface of the semiconductor wafer 6. The slit 10 returns to its original position after the scanning is finished in the state wherein the shutters 5a and 5b are closed. After the heating process is finished, the semiconductor wafer 6 is moved from the lower part of the heater 2 by a shifting mechanism 8. According to the above-mentioned constitution, the effect of time required for the opening and closing of the shutter can be suppressed, and the control of heating period can also be performed in a highly accurate manner.
申请公布号 JPS6180827(A) 申请公布日期 1986.04.24
申请号 JP19840202643 申请日期 1984.09.27
申请人 TOSHIBA CORP;TOSHIBA MICRO COMPUT ENG CORP 发明人 OKUBO KOICHI
分类号 H01L21/26;H01L21/324 主分类号 H01L21/26
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