| 摘要 |
PURPOSE:To obtain a semiconductor device in the structure, wherein the wirings consisting of the second polycrystalline silicon layer for the source and the drain can be favorably ohmic-connected through the source and drain regions even when a low-temperature process to be accompanied by shallowing is applied, by a method wherein an impurity is ion-implanted in the surface of the substrate, the natural oxide films on the interfaces between the substrate and the first polycrystalline silicon layer are made to deteriorate or are broken, the first and second polycrystalline silicon layers are patterned and the wirings for the source and the drain are formed. CONSTITUTION:A first polycrystalline silicon layer 10 is deposited on an SiO2 film, 8, which is formed by a CVD method and has contact holes 9 opened thereon, and after that, phosphorus is ion-implanted in the surface of a substrate 1 through parts of the polycrystalline silicon layer 10, which are being deposited in the contact holes 9, to break the natural oxide films on the interfaces between the substrate 1 and the first polycrystalline silicon layer 10. A second polycrystalline silicon layer 11 is deposited and after the second polycrystalline silicon layer 11 is made into a wiring material layer of the purposive thickness, these polycrystalline silicon layer 10 and 11 are patterned. By this way, wirings 12 and 13, which are favorably ohmic-connected through the n<+> type source region 6 and the contact hole 9 and through the n<+> type drain region 7 and the contact hole 9 without performing a high-temperature thermal treatment and consists of the polycrystalline silicon layer 11, can be formed. |
