发明名称 SEMICONDUCTOR DEVICE HAVING MULTILAYER INTERCONNECTION
摘要 PURPOSE:To improve the working accuracy on the wiring of a bonding pad part by a method wherein, among three layers of aluminum wirings, at least a layer is not used as a bonding pad. CONSTITUTION:A contact photoetching is performed on a part of an oxide film 2, and the first layer of aluminum wiring 3 is formed by performing an evaporation of aluminum and a photoetching. Varnish of high purity by performing a baking, and a through hole is provided by performing a hydrazine etching. The second layer of aluminum wiring 5 is formed by performing the method same as above. The part overlapping with the first layer of aluminum wiring 3 is turned to a bonding pad 4 by the through hole. The second layer of interlayer insulating film 10, consisting of polyimide resin and having a through hole, is obtained and the third layer of aluminum wiring 11, which comes in contact with the second layer of aluminum wiring 5, is formed. A final protective film 6 is formed by boring a through hole on the wiring 11 and the second interlayer film of the bonding pad part is formed at the same time. The third layer of aluminum wiring 11 is the part which has nothing to do with the bonding pad part and it is used as a wiring.
申请公布号 JPS6180836(A) 申请公布日期 1986.04.24
申请号 JP19840201756 申请日期 1984.09.28
申请人 HITACHI LTD 发明人 FUKUSHIMA TAKEKI
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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