| 摘要 |
PURPOSE:To enable a laser device to WRITE and another to READ by a method wherein light reflected by a light-receiving element is prevented from going into the other semiconductor laser and light-receiving element. CONSTITUTION:On an N type GaAs substrate 1, an N type Al0.4Ga0.6As layer 2, N type Al0.3Ga0.7As layer 3, Al0.12Ga0.88As layer 4 to serve as an activation layer, P type Al0.6Ga0.4As layer 5, P type Al0.4Ga0.6As layer 6, and P type Al0.1Ga0.9As layer 7 are formed, in that order. Etching is accomplished, whereby a plurality of belt-shaped regions including the activation layer 4 is formed. Next, etching is accomplished whereby the P type layer 5 only is affected, for the formation of a narrow portion 8, and another narrow portion 8 on the side of the layer 4. An N type Al0.35Ga0.65As layer 9, P type Al0.35Ga0.65As layer 10, N type Al0.35Ga0.65As layer 11 are formed, in that order. An N type ohmic electrode 12 and P type ohmic electrode 13 are built, and then etching is accomplished for the formation of a groove 14 as deep as to reach the N type layer 11. With the entrance surfaces of light-receiving elements C, D being formed oblique to the semiconductor laser resonance surface, the light emitted by a laser A enters the light-receiving element C and the light reflected by the light- receiving element C is kept from re-entering the light-receiving element D and the laser A. |
