| 摘要 |
PURPOSE:To obtain a transistor with the reduced gate resistance and the intentionally contrived and improved efficiency by a method wherein the gate electrode with the section, which is roughly formed in the shape of the T letter of the alphabet, is formed and the ohmic electrodes of the source and the drain are formed in a self-alignment manner. CONSTITUTION:A resin layer is applied on an active layer 12 consisting of a one conductive type semiconductor 11, a part of the resin layer is removed by performing an etching and a first tungsten metal layer is coated on the active layer made to expose. Then, a second titan metal layer and a third gold metal layer are coated thicker than the resin layer at the gate opening part. A gate electrode 27 with the section, which is formed in an almost T shape, is formed by a process, wherein the metal layers are etched, and a lift-off method, wherein the resin layer is removed by performing an etching, then, an ohmic metal layer 24 is coated and the ohmic electrodes of a source 25 and a drain 26 are formed in a self-alignment manner. |
