| 摘要 |
<p>A semiconductor memory device includes word lines (WLO,...), bit lines (BLO, ...) memory cells (a, b, ...) each connected between the word lines and the bit lines at each intersection thereof, sense amplifiers (SAO, ...) each connected to each pair of bit lines for amplifying a difference in potential between said lines, bit line reset circuits (BRO',...) each connected to each pair of the bit lines, the difference in potential being held during the readlwrite cycles, and transfer mode setting circuit for optionally selecting one word line and thereafter another word line, and for simultaneously reading out data in each memory cell connected to the one word line to each bit line and thereafter simu- laneously writing data in each bit line amplified by the sense amplifier to each corresponding memory cell connected to the another word line.</p> |
