| 摘要 |
<p>A semiconductor device includes a semiconductor substrate (11) having a semi-insulating property, a first region (12) of one conductivity-type which will become an emitter region, a second region (13) of the one conductivity-type which will become a collector region, the first and second regions (12, 13) being formed on the substrate (11) with a predetermined spacing therebetween, and a third region (14) of another conductity-type formed on the substrate (11) between the first and second regions (12,13). A forward biasing voltage is applied between the third and first regions (14,12) thereby to form an imaginary base region (19) in the substrate (11) beneath the third region (14) by majority carriers implanted or injected from the third region (14), whereby the semiconductor device carries out a bipolar transistor operation, and at least one of the first and third regions (12,14) consists of a plurality of regions.</p> |
