| 摘要 |
PURPOSE:To prevent a reaction of reactive gases in the parts of ejection ports and the clogging of ejection ports with a resulting product of reaction by installing plural rejection ports for the reactive gases at and in different heights and positions in a CVD device. CONSTITUTION:The many gas ejection ports 14 of a gaseous WF6 supply pipe 13 are disposed in the central part and the gas ejecting cylinders 15 of a gaseous SiH4 supply pipe 12 are disposed around the same in a gaseous raw material supply device 11 in the stage of bringing the gaseous WF6 and SiH4 into reaction and forming a WSi film on a substrate by the CVD device. The ports 14, 15 are not made the same in height; the cylinders 15 are projected from the plane of the ports 14. The gaseous WF6 is ejected from the ports 14 and the gaseous SiH4 from the small holes 16 on the side faces of the cylinders 15. The reaction of the gaseous WF6 and the gaseous SiH4 near the ejection ports and the formation of solid such as WSix are obviated. The clogging of the ports 14, 16 by the resulted product of reaction and the stop of the CVD reaction in the mid-way are thus prevented. |
