| 摘要 |
PURPOSE:To improve the adhesive strength of a metallic film deposited by evaporation on wafers to be treated after sputter etching and to decrease through-hole resistance by constituting a vapor deposition device of three chambers; an etching chamber, evaporating source chamber and vapor deposition chamber. CONSTITUTION:The plural Si wafers are attached to a substrate holder 24 and are first put into the etching chamber 21. The inside of the chamber 21 is evacuated and gaseous Ar is introduced through an inlet 37 into the chamber; thereafter, a high- frequency voltage is impressed between a counter electrode 33 and the holder 24 by an electric power source 31 and the surface of the wafers 25 are etched by Ar ions. The gas contg. the generated SiO2 particles is discharged through a discharge port 38 and thereafter the holder 24 is introduced into the vapor deposition chamber 26 by opening a gate valve 39. The metallic vapor from the evaporating source 22 in the lower evaporating source chamber 23 is then deposited by evaporation on the wafer surfaces by opening the gate valve 56 in the lower part of the chamber 26. Impurities such as SiO2 do not stick on the vapor deposited surfaces of the wafers and therefore the film deposited by evaporation is deposited with the high adhesive strength by evaporation on the wafer surfaces. |
