| 摘要 |
<p>A semiconductor laser comprising a substrate (31); a current blocking layer (32) formed on said substrate (31); a striped channel (320, 321) formed in said current blocking layer (32) on said substrate (31), said striped channel being narrow (321) in the vicinity of the facets (23, 23') and being wide (320) inside of the facets (23, 23') an active layer (34) a portion of the active layer (34), corresponding to narrow portion (321) of said striped channel being a plane to form a window region (22, 22') and another portion of the active layer (34) corresponding to the wide portion (320) of said striped channel being a crescent shape to form a laser operation area (21) with a mesa-structure which is surrounded by burying layers (36) to cut off current leakage from said laser operation are (21), the width (Wb) of the mesa-portion (30) of said laser operation area (21) being not less than the width Wi, of a current injection region (310) formed within said striped channel.</p> |
