| 摘要 |
<p>Disclosed is a method for forming a conductor pattern which comprises the steps of forming a conductive layer (22) on a semiconductor substrate (21), forming a photoresist film (23) on the conductive layer (22), removing that portion (23a) of the photoresist film (23) located on a conductor pattern forming region (22a) of the conductive layer (22), forming a first masking metal film (24a) over the whole surface of the resultant structure, removing the photoresist film (23) along with that portion of the first masking metal film (24) formed thereon so that a portion (24a) of the first masking film (24) remains on the conductor pattern forming region (22a) of the conductive layer (22) to form a first masking metal pattern (24a), and selectively removing the conductive layer (22) by anisotropic etching to form the conductor pattern (22a).</p><p>Since the selective removal of the conductor layer (22) is accomplished by the use of the metal pattern (24a) as a mask, it is possible to form a much finer conductor pattern than is obtained with the use of the photoresist pattern as the mask.</p> |
