| 摘要 |
PURPOSE:To effect non-destructive high-precision and rapid measurement of the thickness of an epitaxial layer, by installing, over an epitaxial growth layer, a semiconductor of the same construction as thin layer is spread as a superlattic structure as a well unit and by observing a wave length of a beam of limitted therefrom. CONSTITUTION:Over a semi-insulating substrate 1 and GaAs layer 2, n type AlxGa1-xAs layer 3, n type GaAs layer 4 as structure piled up by consecutive epitaxial growth, a superlattice structure 5 of AlxGa1-xAs/AlxGa1-xAs is covered as generated from said growth. Later, a wave length of a beam of luminous light from the superficial superlattice structure is observed by the photo-lumines cence measuring method at about 77K. The n type AlxGa1-xAs layer 3 required for the measurement of layer thickness, when it is allowed to grow under the same condition with the well unit of the superlattice structure, as the layer thickness is proportional to the time required to open a shutter of a molecular beam epitaxial growth apparatus, a width of well makes the thickness of the specimen known. |
