发明名称 PLASMA CVD TREATMENT DEVICE
摘要 PURPOSE:To form a uniform film over the entire surface of material to be treated by supporting the materials to be treated in a plasma CVD device at points or lines in the air and providing radiation heating means for said material apart from a cathode. CONSTITUTION:The material 8 to be treated are supported by needle- or bar- shaped supporting members 7 in spot- or wire-shaped small small apart from a supporting base 9 in the prasma CVD device (figure 3). The many materials 24 supported in this state are imposed on the base 14 and are put into a chamber 23. Sheathed heaters 25 as radiation heaters are attached to the outside of the base 14 as the cathode part therefrom and anodes 27 are disposed on the outside thereof. The gaseous raw material introduced through an inlet 23a into the chamber 23 passes through the vent holes provided to the anodes 27 and is supplied uniformly to the materials 24 put in the respective places. Since the materials to be treated are supported at the points or lines, glow discharge 10 is generated over the entire lines, glow discharge 10 is generated over the entire peripheral surface thereof and the uniform film is formed over the entire surface of said materials by the plasma CVD device.
申请公布号 JPS6179772(A) 申请公布日期 1986.04.23
申请号 JP19840201955 申请日期 1984.09.28
申请人 TOSHIBA CORP 发明人 FUJITA TAKASHI;SHIRAISHI YASUHISA
分类号 C23C16/50;C23C16/503;(IPC1-7):C23C16/50 主分类号 C23C16/50
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