| 摘要 |
PURPOSE:To obtain thin-film transistors, the floating gate effect of light-shielding films thereof is eliminated and leakage currents therefrom are reduced, by using two unit thin-film transistors, in which first main electrode extending sections are formed onto semiconductor thin-films and second main electrodes through insulating films, and mutually short-circuiting gate electrodes and the second main electrodes. CONSTITUTION:With a unit thin-film transistor T1, an alpha-Si:H thin-film 14 is formed to a Cr gate electrode 12 on a glass plate 1 through an SiO2 film 13 through plasma CVD, first and second Cr main electrodes 15, 16 partially superposed on the electrode 12 in a plane manner while being brought into contact with the film 14 are shaped, and an extending section 115 in the electrode 15 is superposed on the thin-film 14 and one part of the electrode 16 in the plane manner through an SiOx film 17. Another unit element T2 also has the same structure, and second main electrodes 16 and 26 and gate electrodes 12, 22 are each short-circuited. Since the electrode extending sections are worked as light-shielding films in combination and both transistors are operated as one element having bidirectional properties, leakage currents are determined by the first main electrode grounding characteristics of one unit element, and the floating gate effect of the light-shielding films is eliminated, thus reducing leakage currents. |
