发明名称 COMPOSITE TYPE BISTABLE SEMICONDUCTOR LASER
摘要 PURPOSE:To improve the degree of separation of an input and an output, and to conduct stable bistable laser operation even on cascade connection by forming an optical waveguide for the output and an optical waveguide for the input while being crossed each other in a laser resonator, using a crossing section as a parasitic region having a supersaturation absorption effect and employing other sections as an exciting region having an optical amplifying effect. CONSTITUTION:Both end surfaces of a crystal for a normal semiconductor laser in which InGaAsP/InP double hetero-junction structure is formed onto an N type InP substrate are cloven, and projecting surfaces 2f are shaped. A waveguide 1 for an input crossing at right angles with the projecting surfaces 2f and a waveguide 2 for an output running parallel with the projecting surfaces 2f are crossed each other and formed in the crystal, and a crossing section 3 is positioned in an etching section 3b shaped to the crossing section 3 and used as a parasitic region having a supersaturation absorption effect. Other sections 1a and 2a except the crossing section 3 are employed as exciting regions having an optical amplifying effect. Accordingly, a composite type bistable semiconductor laser capable of separating the input and the output is obtained.
申请公布号 JPS6179282(A) 申请公布日期 1986.04.22
申请号 JP19840200924 申请日期 1984.09.26
申请人 NEC CORP 发明人 NOMURA HIDENORI
分类号 H01S5/00;G02F3/02 主分类号 H01S5/00
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