| 摘要 |
PURPOSE:To prevent decrease in carrier density at the re-growth interface by growing a GaAs crystal as a protective film on a AlxGa1-xAs crystal, and growing a desired crystal after evaporating the protective film when re-growth is performed. CONSTITUTION:By the molecular beam epitaxial growth, a Al0.3Ga0.7As crystal 2 is epitaxially grown on a GaAs crystal 1, and then a GaAs crystal 3 is grown. This structure is taken out of the equipment, again placed in the equipment, and then heated to evaporate the crystal 3. After evaporation of the crystal 3, a Al0.3Ga0.7As crystal 2' is grown. As a result, a clean interface can be obtained which has no decrease in carrier density at the re-growth interface. |
