| 摘要 |
PURPOSE:To obtain a laser having excellent characteristics by forming high resistance clad layers having forbidden band width larger than the forbidden band width of quantum well layers to the upper and lower sections of striped active layers having the well layers and each burying P type and N type semiconductor layers similarly having large forbidden band width into the well layers. CONSTITUTION:A GaAs buffer layer 2, a first clad layer 3 having high resistance consisting of AlxGa1-xAs (x=0.3-0.8), an active layer 6 composed of alternately laminated GaAs quantum well layers 4 and AlyGa1-yAs (y=0.1-1) barrier layers 5, a second clad layer 7 similarly having high resistance and a GaAs cap layer 8 are laminated and grown on a semi-insulating GaAs substrate 1. Two quantum well structure intruding to the layer 3 from the layer 8 is bored, an N type AluGa1-uAs (u=0.3-0.8) layer 9 is buried to one of the structure and a P type AltGa1-tAs (t=0.3-0.8) layer 10 to the other, and an N side electrode 11 and a P side electrode 12 are each shaped onto these layers 9 and 10. Accordingly, carriers are injected to the well layers in the horizontal direction of the barrier layers, thus improving injection efficiency. |
