METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To enable the formation of crystal defects cleanly by forming the crystal defects on the back surface of a semi-conductor substrate by use of high-pressure water. CONSTITUTION:An Si wafer 1 is fixed onto a rotating table 2 with directing its back surface upward and the rotating table 2 is rotated. Nextly high-pressure water is spouted from a jet nozzle 3 and is applied to a back surface of the wafer 1 to form minute defects. Also at the same time when the nozzle 3 is moved to the right and left, the wafer 1 is rotated. Consequently, it becomes possible to form the uniform back damages on the back surface of wafer 1. Because this manufacturing method does not employ a polishing agent, the manufacturing process is clean.