发明名称 |
Method for growing an oxide layer on a silicon surface |
摘要 |
In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation process at a temperature of less than about 1000 DEG C. The semiconductor device is then annealed in a nonoxidizing ambient at a temperature above about 1000 DEG C., and finally a second oxide layer portion is then grown over the first oxide layer portion in a second thermal oxidation process to complete the growth of the oxide layer. The silicon surface may be of either polycrystalline or monocrystalline material. This method avoids both the dopant outdiffusion problems associated with present high-temperature oxidation processes and the stress-related irregularities associated with known low-temperature oxidation processes.
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申请公布号 |
US4584205(A) |
申请公布日期 |
1986.04.22 |
申请号 |
US19840626841 |
申请日期 |
1984.07.02 |
申请人 |
SIGNETICS CORPORATION |
发明人 |
CHEN, TEH-YI J.;BHATTACHARYYA, ANJAN;STACY, WILLIAM T.;VORST, CHARLES J.;SCHMITZ, ALBERT |
分类号 |
H01L21/316;H01L21/321;(IPC1-7):H01L21/473 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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