| 摘要 |
PURPOSE:To obtain the titled device of high moisture resistance and high reliability by a method wherein the grain size of the filler in a sealing resin is made smaller than the thickness of a passivation film. CONSTITUTION:The grain size of the filler 9 in the sealing resin 6 is made smaller than the thickness of the passivation film 8. This can prevent the filler 9 from thrusting into the passivation film 8 under a pressure at the time of resin sealing and then from reaching aluminum wirings 7 and a smooth coat film 10. Therefore, it becomes difficult that the moisture infiltrating from outside readily reach the aluminum wirings 7 and the smooth coat film 10, causing no problems such as corrosion and the variation of transistor characteristics; accordingly, the titled device of high reliability can be obtained. |
