| 摘要 |
<p>PURPOSE:To improve wire bonding properties, and to enhance yield and reliability by die-bonding a metallic thick film on the upper surface of a semiconductor laser element with a heat sink and wire-bonding a lead wire with a metallic thick film on a lower surface. CONSTITUTION:Photo-resist layers 4 and 4a according to the same pattern in the upper and lower surfaces of a laser element 3 are each formed onto the upper and lower surface so that the positions of the upper and lower surfaces are conformed by using a device such as a double-side mask aligner. Metallic thick films 5 consisting of gold, silver, tin or the like and 5a composed of the same metal are shaped severally onto the upper and lower surfaces of the laser element 3 through selective plating, the photo-resist layers 4 and 4a are removed, and the whole is changed into chips. The upper and lower sections of the laser element 3 are turned upside down and the metallic thick film 5 is die-bonded onto a heat sink 6, and one tip of a gold wire 7 is wire- bonded with the upper surface of the metallic thick film 5a and the other tip of the gold wire 7 with a lead terminal 8 respectively.</p> |
