| 摘要 |
PURPOSE:To reduce pattern dependence on the reading of a memory for forming a plurality of first aluminum reinforcing wires along the direction of a word line as the longitudinal direction of a memory cell plate. CONSTITUTION:A capacitance electrode 3 is shaped on the whole memory cell array on a field insulating film 18, and an aluminum reinforcing wire 5 is connected to the capacitance electrode 3 through contact holes formed at regular intervals at the end sections of a memory cell array. The reinforcing wire consists of the same aluminum layer as a word line WL, and extends in parallel with the word line WL. A reinforcing wire 6 is composed of the same aluminum layer as a data line DL, and extends in parallel with the data line DL. Since no memory cell is shaped and there is the field insulating film 18 in a region to which the reinforcing wire 6 is formed, a memory cell capable of connecting to the same data line is isolated at the center, and connected to different data lines 171, 172. A memory cell plate 10 is connected so that potential difference is minimized by the aluminum reinforcing wires, thus reducing a time constant to pattern dependence. |
