| 摘要 |
PURPOSE:To obtain the titled element of high reliability which enables high-speed response by a method wherein the uppermost semiconductor layer at the part except the current-injected part is turned into P type conductivity with a specific carrier concentration, and an insulation film is formed on the uppermost semiconductor layer at the part except the current-injected part and its outer periphery. CONSTITUTION:The uppermost semiconductor layer 4 at the part except the current-injected part 41 of the uppermost layer of lamination structure which includes an active layer 2 contributed to light emission is turned into P type conductivity with a carrier concentration of less than 1X10<18>cm<-3>, and the insulation film 5 is formed on the semiconductor layer 4 at the part except the current-injected part 41 and its outer periphery. Thereby, because the diameter of an electrode window 51 is much larger than that of the current-injected part 41, the stress at the edge of the insulation film 5 caused by the partial formation of the insulation film 5 on the semiconductor layer 4 is not exerted in the periphery of the light emitting part; then, high reliability of the element can be obtained. Further, the resistivity of the semiconductor layer 4 except the current-injected part 41 is larger than that of this part 41 by a figure or more; therefore, good effect of current structure can be obtained in a high-frequency region as well as a DC low-frequency region. |
