发明名称 THIN FILM GROWING METHOD
摘要 PURPOSE:To form a selective film having the pattern of uniform characteristics in a highly precise manner by a method wherein a metal mask is formed using a magnetic material, and a magnet is installed on a heat equalizing plate consisting of non-magnetic material to be superposed on the reverse side of a substrate. CONSTITUTION:A rare-earth magnet 3 is buried in the upper surface of an aluminum heat equalizing plate 2 which is stacked on the upper surface of a glass substrate. A metal mask 4 consisting of magnetic stainless steel is superposed on the lower surface of the substrate 1, and the metal mask 4 is supported by a stainless steel frame 5. The heat equalizing plate 2 is heated up to 300 deg.C by the radiant heat 6 coming from the heater arranged at the upper part, and the substrate 1 is heated by the heat equalizing plate 2. The silicon 7 decomposed from silane gas is deposited on the lower surface of the substrate 1 through the window part of the metal mask 4 consisting of a magnetic material. As the metal mask 4 is attracted to the magnet 3 and tightly fixed to the glass substrate 1 while the silicon 7 is being deposited and it does not come up, an a-Si film can be formed in a highly precise manner in acccordance with the pattern of the mask 4.
申请公布号 JPS6132513(A) 申请公布日期 1986.02.15
申请号 JP19840154846 申请日期 1984.07.25
申请人 FUJI ELECTRIC CO LTD 发明人 MIYAGI MASAHIDE;IIJIMA MASAO
分类号 C23C16/04;C23C16/24;H01L21/205;H01L31/04 主分类号 C23C16/04
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