| 摘要 |
PURPOSE:To device the state of polishing performed on a wafer by a method wherein the diffusion resistors in the same form are formed on the plural moats in such a form as to intersect with the moats, electrodes led out from both ends of each diffusion resistor are provided on the surface of the wafer, and the resistivity of each diffusion resistor is measured by the electrode led out from both ends. CONSTITUTION:A third moat 13, a fourth moat 14 and a fifth moat 15, which are respectively different in height, are provided in addition to a first moat 6, which is used as the main pattern, and diffusion resistors 11a-11c are provided on the top parts of these moats. Electrodes 12, which are led out from both ends of the diffusion resistors 11a-11c, are provided on parts of the surface of the semiconductor device, from where parts of an oxide film 4a formed in the diffusion process are removed and where contacts are made. When a polishing to be performed on the wafer is shot, the resistivity of the diffusion substrate 11a becomes 100kOMEGA or less as the diffusion resistor 11a is limited to just being cut a part thereof by the third moat 13 and the resistivities of the diffusion resistors 11b and 11c become as the setpoint. Reversely, when the polishing is excessively performed, the diffusion resistor 11a and the diffusion resistor 11b are completely cut, the resistivities thereof become 100kOMEGA or more and the diffusion resistor 11c is also cut a part thereof and the resistivity becomes larger than 1kOMEGA. |
