| 摘要 |
PURPOSE:To produce a semiconductor device with stable and high reliability while improving the characteristics in the normal direction by a method wherein the backside electrode structure is composed of three layers of V layer, Sb layer and Ag layer. CONSTITUTION:A V-layer 12, an Sb-layer 13 and an Ag-layer 14 are formed on the backside of ground N<+> layer 5a by evaporating process and then an Ag bump 11 is formed by plating processes on the surface electrode 10 to complete a semiconductor device. The V-layer 12 provides a semiconductor substrate 5 and the backside electrodes with adhering strength while the Sb layer 13 increases the N<+> concentration in the semiconductor substrate 5 to bring the semiconductor substrate 5 into ohmic contact with the V-layer 12. In such a constitution, the constant between semiconductor device and lead side may be improved since Cu-layer and Sb layer coated on the Ag-layer of semiconductor side and lead side may be easily alloyed. Besides, the Ag-layer 14 may improve the contact between the backside electrodes and the lead ends. |
