| 摘要 |
PURPOSE:To make uniform the grain diameter of the semiconductor of a semiconductor layer by a method wherein, after grain diameter is made uniform by performing a heat treatment on the semiconductor layer in advance, the layer is fused and solidified by projecting a laser beam. CONSTITUTION:An SiO2 insulating film 2 and a polycrystalline silicon layer 3 are laminated on a substrate 1, the structure of polycrystalline is broken by ion-implanting Si<+>, the above is brought into an amorphous state, and an amorphous silicon layer 4 is obtained. Then, a heat treatment is performed, and a polycrystalline silicon layer 5, consisting of crystal grains of extremely homogeneous and having low grain boundary trap density, is formed. The crystallizability of the layer 5 is enhanced by fusing and solidifying the layer by projecting a laser beam, and a single crystal silicon layer 7, which is a semiconductor layer approximate to single crystal, is formed. The single crystal silicon layer 7 obtained by performing the above-mentioned procedures is homogeneous and have an excellent crystallizability, it is not only excellent in reproducibility and in the yield of production, but also it has a high electric characteristics. |
