| 摘要 |
PURPOSE:To obtain an ISO-SIT, which can be operated by large currents and at high speed, by realizing ohmic contacts both to majority carriers and minority carriers in a source region in the ISO-SIT. CONSTITUTION:n<-> wells 302 are formed onto a p type silicon substrate 301, a p<+> region 303 for source, n<+> regions 304 for the source, an n<+> region 305 for a drain and p<+> regions 306 for a gate are shaped to the surfaces in the wells 302, and source electrodes 307, drain electrodes 308 and gate electrodes 309 are each brought into contact with corresponding regions through contact windows in an insulating film 310. Source regions are formed by n<+>p<+> junctions among the n<+> regions and the p<+> regions, and the source regions can realize ohmic contacts both to majority carriers and minority carriers to the n<-> wells 302. Accordingly, holes are not stored in channels in the vicinity of the source regions, thus easily realizing the increase of currents and operation at high speed. |
