| 摘要 |
PURPOSE:To reduce the parasitic resistance of a gate electrode, and to increase the withstanding voltage of a Schottky gate by a method wherein a high-concentration semiconductor layer is formed to a semi-insulating substrate, a first insulating film is shaped onto the whole surface, a recessed section is formed at the central section of the high-concentration semiconductor layer through etching, ions are implanted to the high-concentration semiconductor layer in the lower section of the recessed section, a second insulating layer is shaped onto the whole surface and changed into a gate insulating film through activation and etching, and the gate electrode is formed in the recessed section. CONSTITUTION:The ions of an impurity are implanted while a semi-insulating GaAs substrate 1 is formed in a (100) face and a photo-resist 2 is used as a mask to shape an N<+> type high-concentration semiconductor layer 3. A first insulating film 4 is formed onto the whole surface, the first insulating film 4 is bored, and a recessed section 6 is processed to the N<+> type high-concentration semiconductor layer 3 through etching. Impurity ions are implanted through the recessed section to shape an N type channel layer 7, a second insulating film 8 is formed onto the whole surface and activated and annealed, a gate insulating film 9 is shaped to the recessed section 6 and the side wall section of the first insulating film 4 through etching, and a metal is evaporated and a gate electrode 11 is shaped through photoetching. |
