| 摘要 |
PURPOSE:To eliminate the generation of various kinds of defects accompanying the use of epitaxial growth by a method wherein the multichannel JFET is produced by twice of impurity diffusion without using epitaxial growth. CONSTITUTION:An N<+> type layer 7 of high concentration is formed over the surface of an N-type semiconductor substrate 6 of low concentration by impurity diffusion. Next, grooves 8 ... invading to the region of low concentration of the substrate; therefore, the second diffusion of P-type impurity is carried out along the grooves 8 .... The diffusion at this time produces ununiform formed depths because of the difference in impurity concentration in the periphery of the groove between the substrate part 6' of no impurity diffusion and the substrate part 7 of N<+> type diffusion. In other words, a deep diffused layer 9 of depth A is formed in the low concentration region 6', and a shallow diffused layer 10 of depth B in the high concentration region 7'. c represents intergate pats, i.e. channel pats. The two kinds of P-type diffused layers 9 and 10 function as the gate region in an integral body. |
