| 摘要 |
PURPOSE:To form a buried type element-isolating region formed out of an extremely narrow insulator partition wall by a method wherein a photo resist layer finished in exposure is developed so that the angle made between the end surface of the photo resist layer and the surface of the silicide layer may be 70 deg. or more and 90 deg. or less, and an insulator is deposited in an aperture formed by etching. CONSTITUTION:An insulator layer 2, a metallic silicide layer 3, and a photo resist layer 4 are formed on the semiconductor substrate 1, and the layer 4 is exposed to light by using a photo mask 6 and then developed so that the angle made between the end surface of the layer 4 and the surface of silicide layer 3 may be 70 deg. or more and 90 deg. or less. Using the etching mask of the developed photo resist layer 4, the silicide layer 3 is etched only in a narrow region lying along the end surface with the mixed gas of a chlorine series gas with oxygen gas. The insulator layer 2 is etched by being masked with this silicide layer 3, and the aperture 7 is formed by etching the upper layer of the substrate 1 by using the mask of the layers 3 and 2 each etched; then, the elements are isolated by insulator deposition. |
