| 摘要 |
PURPOSE:To obtain the title element of good current stricture and excellent performance and reliability by a method wherein an AlzGa1-zAs layer (1>=z>=0.05) of the first conductivity type is formed on a double hetero structure, and the first GaAs layer of the second conductivity type is formed; further, the second GaAs layer of the first conductivity type is formed. CONSTITUTION:An N-GaAs buffer layer 42, an N-(Al0.3Ga0.7)0.5In0.5P clad layer 43, an undoped Ga0.5In0.5P active layer 44, a P-(Al0.3Ga0.7)0.5In0.5P clad layer 45, a P-Al0.2Ga0.8As layer 46, and an N-GaAs layer 47 are successively grown on an N-GaAs substrate 41 by MOVPE. Next, a stripe aperture 51 is formed by selectively etching the layer 47 with a photo resist 52. At this time, the use of an etchant which etches only GaAs but does not etch AlGaAs enables the etching to be automatically stopped when the surface of the layer 46 is exposed. On removal of the resist 52, the layer 47 and the layer 46 in the aperture, which are only As compounds, are exposed to the surface. |
