| 摘要 |
PURPOSE:To improve a photocurrent conversion efficiency by forming a P-N junction depletion layer formed between an N type epitaxial layer and a P type substrate near the surface of a semiconductor device, thereby increasing a light absorbed by the depletion layer. CONSTITUTION:A P type increasing layer 11 is diffused to be implanted to an N<-> type epitaxial layer 2 between the P type silicon substrate 1 of a photodi ode A and an N<-> type epitaxial layer 2. When the boron ion implanting amount for forming the layer 11 is 1.3X10<12> pieces/cm<3>, a depletion layer 10 is disposed at 4.3-9.7mum under the surface of the silicon. Thus, the light absorbed by the layer 10 becomes approx. 27%, and the conversion efficiency from a light to a current of the case that there is no P<+> type element separation and diffusion can be increased by approx. 70%. |
