| 摘要 |
Method of crucible-free zone-melting a semiconductor rod which includes monitoring a melting zone formed in and traveling through a semiconductor rod surrounded by an induction heating coil, producing a respective signal corresponding to values of the actual diameters d of the semiconductor rod at a crystallization interface of the melting zone, comparing the signals corresponding to the actual diameter values d with a signal corresponding to a nominal diameter value ds so as to produce a signal corresponding to a respective first control deviation DELTA d, continuously combining the signals corresponding to the actual diameter values d and the signal corresponding to the respective first control deviation DELTA d to form respective signals corresponding to a new nominal diameter value ds*, respectively, in accordance with the relationships: |
| 申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
TICAK, FRIEDRICH, DIPL.-ING., 8000 MUENCHEN, DE;STUT, HANS, 8031 GROEBENZELL, DE |
