| 摘要 |
PURPOSE:To provide a sensitivity characteristic which exhibits a high sensitivity in a relatively low illumination and a low sensitivity in a high illumination by reading out a light carrier generated by light carrier generating means through a static induction transistor as a signal in response to the carrier. CONSTITUTION:Whena light 40 is emitted to a photodiode region D1, a light carrier excited in a P-N junction region runs at holes to the side of a transparent electrode 36 and at electrons toward an N type region 32 and stored thereat. As the quantity of an incident light 40 increases more, the amount of electrons stored increases. The electrons stored in the region 32 apparently relatively increase the potential of the region, the potential of a P type region 14 relatively increases, and the junction potential difference with respect to a substrate 12 increases. As the quantity of the light 40 increases more, the potential of the region32 increases more, and an SIT Q forms a gate storage type SIT. Accordingly, the variation in a current ID1 flowed to a photodiode D1 with respect to a power source voltage VD becomes as designated by a solid line 110 in a dark state and by a broken line 112 in a bright state. |
