| 摘要 |
A semiconductor plate (10), e.g. silicon, is etched from both sides to form a cluster of cavities (12) connected by narrow grooves (14). The plate (10) is sandwiched between and electrostatically bonded to two insulating plates (16), e.g. of borosilicate glass, carrying electrodes (18) connected by tracks (19), in correspondence with the cavities (12) and grooves (14). Connections are made via plated-through holes (24) and the differential pressure communicated through the holes and deflecting the thinned diaphragm areas of the plate (10) is measured by the differential capacitance between the electrode (18,19) and the plate (10). The provision of a plurality of diaphragm areas enables higher differential pressures to be measured. |
