| 摘要 |
PURPOSE:To reduce a thermal resistance between a semiconductor chip and a substrate and realize long service life of a semiconductor device by providing a dummy exploded electrode between a semiconductor chip and a substrate and realizing insulation at the connecting portion between dummy exploded electrode for heat radiation and semiconductor chip only with a single layer. CONSTITUTION:A semiconductor chip 3 is electrically connected with a substrate 1 with an explored electrode 4 such as a solder bump. A dummy exploded electrode 5 for heat radiation insulated by a single layer of insulation film from a semiconductor chip 3 is provided for transmitting the heat generated in the semiconductor chip 3 to the side of substrate 1. In the connecting portion of such dummy exploded electrode 5 for heat radiation and semiconductor chip 3, a first insulating film 6 such as alumina (Al2O3), etc. is provided under a semiconductor chip 3 and the first to third wirings 7-9 consisting of aluminum, etc., a base metal film 10 for forming exploded electrode and a dummy exploded electrode 5 for heat radiation are sequentially provided under such first insulation film. Since only one insulating film 6 is provided between the semiconductor chip 3 and exploded electrode 4, thermal resistance between semiconductor chip 3 and exploded electrode 4 can be reduced. |
