| 摘要 |
PURPOSE:To improve the reliability of a manufactured semiconductor element which has higher reproducibility in the first and second amorphous silicon car bide layers by forming without altering the composition of a raw gas for forming an amorphous silicon carbide. CONSTITUTION:Silicon compound which exhigits stable gaseous state in its structure at room temperature such as SiH4, carbon compound which exhibits stable gaseous state in its structure at room temperature such as C2H4, mixture gas having the first composition ratio mixed with desired density ratio and mixture gas having the second composition ratio different from the first composi tion ratio are diluted, for example, in argon, sequentially led into a glow dis charger, and sequentially decomposed by a glow discharge for the desired time. Thus, different type junction made of a-Si1-xCx having desired composition and thickness is formed on the substrate. |
