| 摘要 |
For providing semiconductor zones (16, 18, 26) and contact metallization (19, 27) within an opening (9) in a self-registered manner, which opening is provided along its edge with polycrystalline connection parts (10) separated by an insulating material (15) from the metallization (19, 27), a protective layer (11) is formed which is maintained within the opening (9)until within this opening (9) the connection parts (10) are formed by anisotropic etching from a uniform layer of polycrystalline semiconductor material (10). The method is suitable for the manufacture of both bipolar transistors and field effect transistors. |
