| 摘要 |
PURPOSE:To dispense with the mask matching of the surface electrodes by a method wherein DC bias is applied in electrolyte, light is irradiated on the photoconductive semiconductor thin film and a metal is plated on the surface of the semiconductor thin film by making current flow. CONSTITUTION:When the resistance of a semiconductor thin film 3 is low, the semiconductor thin film 3 can be electroplated by making DC current flow from electrodes 2 on the side of the substrate, yet the resistance is usually high and current hardly flows. Accordingly, the rate of plating is slow. Therefore, light is irradiated on the semiconductor thin film 3 and the rate of plating is made to increase utilizing the photoconductive characteristics of the thin film 3. Lastly, an etching is performed on the semiconductor thin film 3 using surface electrodes 5 electroplated as masks and the semiconductor thin film 3 is isolated. |
