发明名称 THIN-FILM PHOTOVOLTAIC ELEMENT
摘要 PURPOSE:To protect lower layers from damage in a process of isolating upper layers by a method wherein the isolating regions for semiconductor thin films and second electrodes are positioned, respectively, on the regions of first electrodes and semiconductor thin films that are located just under them, in a plurality of photovoltaic regions composed of first electrodes, semiconductor thin films, and second electrodes, deposited in that order. CONSTITUTION:When an a-Si layer is patterned on metal electrodes 21, 22, 23, 24, isolating regions 71, 72 between a-Si layer regions 31, 32, 33 are positioned just over the electrodes 22, 23 of solar battery cells 20, 30. Isolating regions 73, 74 between transparent electrodes 41, 42, 43 formed by the patterning of a transparent electrode layer are also caused to be positioned over the layers 32, 33 of the solar battery cells 20, 30. Consequently, the process of laser beam application is accomplished only on the metal electrodes and semiconductor thin films that are free of steps, protecting the substrate 1 and metal electrode layers.
申请公布号 JPS6174376(A) 申请公布日期 1986.04.16
申请号 JP19840195989 申请日期 1984.09.19
申请人 FUJI ELECTRIC CO LTD 发明人 UCHIDA YOSHIYUKI;NISHIURA SHINJI
分类号 H01L31/09;H01L27/142;H01L31/04 主分类号 H01L31/09
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