发明名称 PROTECTION CIRCUIT
摘要 A protection circuit is composed of first and second regions formed in a semiconductor substrate so as to be operable as distributed transistors which have a large current capacity as a whole. Compared with the concentrated transistor used in the prior art, a much greater degree of protection is provided.
申请公布号 GB2133926(B) 申请公布日期 1986.04.16
申请号 GB19830030763 申请日期 1983.11.18
申请人 * NEC CORPORATION 发明人 HATSUHIDE * IGARASHI
分类号 H01L27/04;H01L21/822;H01L23/60;H01L27/02;H01L29/78;(IPC1-7):H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项
地址