MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make it feasible to detect the etching terminal of semiconductor substrate accurately by a method wherein a substrate for measurement wherein a material layer to be etched during the same time as that of another substrate to be etched is provided on a reaction layer is etched simultaneously in the same reaction chamber. CONSTITUTION:When a single crystal Si substrate 1 is etched down to the depth d1, the etching time is equivalent to the etching time required for etching the substrate 1 down to the depth d1. A polycrystalline Si layer 3 of thickness d1 is formed on an SiO2 layer 2 making reaction at interface and then another surface 4 for measurement is provided. Then the substrates 1 and 4 arranged in the same reaction chamber 5 are simultaneously etched while irradiating the substrate 4 with laser beams 7. Finally interference light 8 emitted by reaction on the surface and interface of layer 3 of substrate 4 may be detected to perform etching process until interference wave forms are eliminated.