| 摘要 |
PURPOSE:To enable to prevent the breakdown of a gate insulating film by charge up without disturbing highly densifying by a method wherein a part of wiring pattern is provided on the gate insulating film at the active region. CONSTITUTION:A field insulating film 3 is, for instance, SiO2 oxide film, and, for instance, SiO2 gate oxide film is formed on the upper part of the active region 11. Within the whole area of the wiring pattern 4, the area of the part which exist on the thick field insulating film 3 is S2, and the area of the part which is on the thin gate oxide film, namely, active region is S1. Hereupon, the value of the distance B is made so as S2/S1 to be the prescribed ratio, for instance, under 10<3> considering the matching accuracy. Accordingly, even if positioning deviation may happen, the ratio of under 10<3> is maintained, and the breakdown of gate insulation can be prevented. |
