| 摘要 |
PURPOSE:To selectively form an insulating thin film and to improve the characteristics of the thin film, by setting a semiconductor sample provided with a predetermined pattern of mask in a vacuum container, heating the mate rial by means of a heater and light application, and exposing the material to a mixture gas consisting of a material gas and a reaction gas. CONSTITUTION:A sample 12 provided with a predetermined pattern of mask is put on a susceptor 13 within a vacuum container 11 of a thin film producing apparatus. The sample 12 is heated with a heater 14 in the susceptor 13 and with first and second lights 22 and 24 applied from a reflection mirror 21 through a transmitting window 23. Gas introduction ports 15-17 are provided on a side wall of the container 11, so that a material gas, a reaction gas and a semiconductor gas are introduced from the ports 15, 16 and 17, respectively. The mirror 21 is rotated so as to dissociate the reaction gas with the first light 22 and to heat the sample 12 with the second light 24. In this manner, the sample 12 is provided selectively with an insulation thin film, while the characteristics of the thin film are improved. |
