| 摘要 |
PURPOSE:To prevent a passivation film from deteriorating by providing electrodes of eutectic crystal of Au and oxidative metal at a semiconductor element, depositing nonoxidative metal on the electrodes, and forming the film on the exposed surface of the semiconductor, thereby removing a mechanical stress of the nonoxidative metal. CONSTITUTION:The first clad layer 2, an active layer 3 and the second clad layer 4 are sequentially laminated on one main surface of a substrate 1, the first and second electrodes 5, 6 are formed on the other surface of the substrate 1 and the surface of the layer 4 to form a semiconductor laser chip. A mask 7 made of Au is partly formed on the electrode 5, and a passivation film 8 for protecting the end is coated on the first electrode 5 side. A mechanical stress for lifting the mask 7 in a direction of an arrow is applied to the mask 7, thereby readily removing the mask 7 and the film 8 on the mask 7. Au wirings 9 are bonded by a supersonic wire bonding method on the substrate 1 exposed by removing the mask 7 to prevent the film 8 from deteriorating. |
