| 摘要 |
PURPOSE:To obtain a MESFET having excellent noise characteristics by a method wherein a gate consisting of Mo is formed onto the surface of a GaAs substrate, Si is implanted to the surface of the substrate while using the gate as a mask, the whole is thermally treated under the state in which the surface is coated with an insulating film, and n<+> type source-drain regions are shaped through self-alignment. CONSTITUTION:An n<-> type active layer 2 is formed onto a GaAs semi-insulating substrate 1 through the implantation of Si ions in low concentration, epitaxial growth or the like while being surrounded by an SiO2 film, and a gate electrode 7 composed of Mo is shaped to the central section of the surface of the layer 2. The electrode 7 is used as a mask, and Si<+> ions are implanted into the layers 2 on both sides of the electrode 7 to form n<+> type ion implanting layers. Au-Ge films 11, Au films 12 and Ni films 13 are each laminated and shaped onto the central surfaces of the ion implanting layers and the electrode 7, and a spin-ON glass film 9 and a CVD-SiO2 film 10 are laminated and applied onto the whole surface while surrounding these films. Said ion implanting layers are pushed in and diffused through heat treatment, thus obtaining n<+> type source and drain regions 3. |
