| 发明名称 |
Intermetallic semiconductor ohmic contact |
| 摘要 |
A 10-6 ohm cm2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5x1019/cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.
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| 申请公布号 |
US4583110(A) |
申请公布日期 |
1986.04.15 |
| 申请号 |
US19840620591 |
申请日期 |
1984.06.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JACKSON, THOMAS N.;KIRCHNER, PETER D.;PETTIT, GEORGE D.;WOODALL, JERRY M. P. |
| 分类号 |
H01L29/41;H01L21/28;H01L21/285;H01L29/43;H01L29/45;(IPC1-7):H01L23/48;H01L29/167 |
主分类号 |
H01L29/41 |
| 代理机构 |
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代理人 |
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| 主权项 |
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